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? semiconductor components industries, llc, 2001 november, 2001 rev. 3 1 publication order number: dtc114e/d dtc114e series preferred devices bias resistor transistor npn silicon surface mount transistor with monolithic bias resistor network this new series of digital transistors is designed to replace a single device and its external resistor bias network. the brt (bias resistor transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. the brt eliminates these individual components by integrating them into a single device. the use of a brt can reduce both system cost and board space. the device is housed in the to92 package which is designed for through hole applications. maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc total power dissipation @ t a = 25 c (note 1.) derate above 25 c p d 350 2.81 mw mw/ c thermal characteristics characteristic symbol value unit thermal resistance, junction to ambient (surface mounted) r q ja 357 c/w operating and storage temperature range t j , t stg 55 to +150 c maximum temperature for soldering purposes, time in solder bath t l 260 10 c sec device marking and resistor values device marking r1 (k) r2 (k) shipping dtc114e dtc124e dtc144e dtc114y dtc114t dtc143t dtd113e dtc123e dtc143e dtc143z dtc114e dtc124e dtc144e dtc114y dtc114t dtc143t dtd113e dtc123e dtc143e dtc143z 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 10 22 47 47 1.0 2.2 4.7 47 5000/box 1. device mounted on a fr4 glass epoxy printed circuit board using the minimum recommended footprint. http://onsemi.com case 29 to92 (to226) style 1 preferred devices are recommended choices for future use and best overall value. npn silicon bias resistor transistor 1 2 3 pin 3 collector (output) pin 1 emitter (ground) pin 2 base (input) r1 r2 dtc1 = specific device code xxx = (see table) y = year ww = work week marking diagram dtc1xxx yww
dtc114e series http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectorbase cutoff current (v cb = 50 v, i e = 0) i cbo 100 nadc collectoremitter cutoff current (v ce = 50 v, i b = 0) i ceo 500 nadc emitterbase cutoff current dtc114e (v eb = 6.0 v, i c = 0) dtc124e dtc144e dtc114y dtc114t dtc143t dtd113e dtc123e dtc143e dtc143z i ebo 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 madc collectorbase breakdown voltage (i c = 10 m a, i e = 0) v (br)cbo 50 vdc collectoremitter breakdown voltage (note 2.) (i c = 2.0 ma, i b = 0) v (br)ceo 50 vdc on characteristics (note 2.) dc current gain dtc114e (v ce = 10 v, i c = 5.0 ma) dtc124e dtc144e dtc114y dtc114t dtc143t dtd113e dtc123e dtc143e dtc143z h fe 35 60 80 80 160 160 3.0 8.0 15 80 60 100 140 140 350 350 5.0 15 30 200 collectoremitter saturation voltage (i c = 10 ma, i e = 0.3 ma) dtc144e/dtc114y (i c = 10 ma, i b = 0.3 ma) dtd113e/dtc143e (i c = 10 ma, i b = 5 ma) dtc123e (i c = 10 ma, i b = 1 ma) dtc114t/dtc143t/ (i c = 10 ma, i b = 1 ma) dtc143z/dtc124e v ce(sat) 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k w ) dtc114e dtc124e dtc114y dtc114t dtc143t dtd113e dtc123e dtc143e dtc143z (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k w ) dtc144e v ol 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc 2. pulse test: pulse width < 300 m s, duty cycle < 2.0%
dtc114e series http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k w ) dtc114e dtc124e dtc144e dtc114y dtc123e dtc143e (v cc = 5.0 v, v b = 0.05 v, r l = 1.0 k w ) dtd113e (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k w ) dtc114t dtc143t dtc143z v oh 4.9 vdc input resistor dtc114e dtc124e dtc144e dtc114y dtc114t dtc143t dtd113e dtc123e dtc143e dtc143z r1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 k w resistor ratio dtc114e/dtc124e/dtc144e dtc114y dtc114t/dtc143t dtd113e/dtc123e/dtc143e dtc143z r 1 /r 2 0.8 0.17 0.8 0.055 1.0 0.21 1.0 0.1 1.2 0.25 1.2 0.185
dtc114e series http://onsemi.com 4 typical electrical characteristics dtc114e 10 02030 i c , collector current (ma) 10 1 0.1 v in , input voltage (volts) t a =-25 c 75 c 25 c 40 50 1 0.1 0.01 0.001 020 40 6080 i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) 1000 100 10 1 10 100 i c , collector current (ma) h fe , dc current gain (normalized) t a =75 c 25 c -25 c t a =-25 c 25 c i c /i b = 10 75 c 25 c t a =-25 c 100 10 1 0.1 0.01 0.001 0123 4 v in , input voltage (volts) i c , collector current (ma) 5678910 50 010203040 4 3 1 2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 75 c f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v ce = 10 v v o = 0.2 v figure 1. derating curve 250 200 150 100 50 0 -50 0 50 100 150 t a , ambient temperature ( c) p d , power dissipation (milliwatts) r q ja = 625 c/w figure 2. v ce(sat) versus i c figure 3. dc current gain figure 4. output capacitance figure 5. v ce(sat) versus i c figure 6. v ce ( sat ) versus i c
dtc114e series http://onsemi.com 5 typical electrical characteristics dtc124e figure 7. v ce(sat) versus i c figure 8. dc current gain figure 9. output capacitance figure 10. output current versus input voltage 1000 10 i c , collector current (ma) h fe , dc current gain (normalized) 100 10 1 100 75 c 25 c 100 0 v in , input voltage (volts) i c , collector current (ma) 10 1 0.1 0.01 0.001 246810 t a =-25 c 0 i c , collector current (ma) 100 v in , input voltage (volts) t a =-25 c 75 c 10 1 0.1 10 20 30 40 50 figure 11. input voltage versus output current 0.001 v ce(sat) , maximum collector voltage (volt s t a =-25 c 75 c 25 c 0.01 0.1 1 40 i c , collector current (ma) 020 6080 50 0 10203040 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 25 c t a =75 c -25 c v ce = 10 v 25 c -
dtc114e series http://onsemi.com 6 typical electrical characteristics dtc144e figure 12. v ce(sat) versus i c 0246810 100 10 1 0.1 0.01 0.001 i c , collector current (ma) v in , input voltage (volts) t a =-25 c 75 c 25 c figure 13. dc current gain figure 14. output capacitance 100 10 1 0.1 010 20 30 40 50 v in , input voltage (volts) i c , collector current (ma) figure 15. output current versus input voltage 1000 10 i c , collector current (ma) h fe , dc current gain (normalized) t a =75 c 25 c -25 c 100 10 1 100 figure 16. input voltage versus output current 0 204060 80 10 1 0.1 0.01 i c , collector current (ma) t a =-25 c 25 c 75 c v ce(sat) , maximum collector voltage (volts) t a =-25 c 25 c 75 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v ce = 10 v i c /i b = 10 v o = 0.2 v
dtc114e series http://onsemi.com 7 typical electrical characteristics dtc114y 10 1 0.1 01020304050 100 10 1 0246810 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 101520253035404550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 17. v ce(sat) versus i c i c , collector current (ma) 0 20 40 60 80 v ce(sat) , maximum collector voltage (volt s figure 18. dc current gain 1 10 100 i c , collector current (ma) figure 19. output capacitance figure 20. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 21. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 -25 c 25 c t a =75 c v ce = 10 300 250 200 150 100 50 0 2 4 6 8 15 20 40 50 60 70 80 90 f = 1 mhz l e = 0 v t a = 25 c t a =-25 c 25 c 75 c i c /i b = 10 75 c 25 c t a =-25 c v o = 5 v v o = 0.2 v t a =-25 c 25 c 75 c
dtc114e series http://onsemi.com 8 typical applications for npn brts load +12 v figure 22. level shifter: connects 12 or 24 volt circuits to logic in out v cc isolated load from m p or other logic +12 v figure 23. open collector inverter: inverts the input signal figure 24. inexpensive, unregulated current source
dtc114e series http://onsemi.com 9 package dimensions to92 to226aa case 2911 issue al notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 1: pin 1. emitter 2. base 3. collector
dtc114e series http://onsemi.com 10 notes
dtc114e series http://onsemi.com 11 notes
dtc114e series http://onsemi.com 12 publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. dtc114e/d

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